lds -00 22 - 2, rev . 1 (111617) ?2011 microsemi corporation page 1 of 6 2n3439u4 thru 2n3440u4 c ompliant npn low power silicon transistor qualified per mil -prf- 19500/3 68 qualified levels : jan, jantx , jantxv and jans * (*2n3440u4 only) description t his family of 2n3439u4 through 2n3440u4 high - frequency, epitaxial planar transistors feature low saturation voltage. the u4 package is hermetically sealed and provides a low profile for minimizing board height. these devices are also available in ua, to -5 and to - 39 packaging. microsemi also offers numerous other transistor products to meet hi gher and lower power ratings with various switching speed requirements in both through - hole and surface- mount packages. u4 package also available in : ua packa ge (surface mount) 2n3439ua C 2n3440ua to - 5 package ( long leaded) 2n3439l C 2n3440l to - 39 packag e (leaded) 2n3439 C 2n3440 important: for the latest information, visit our website http://www.microsemi.com . features ? jedec regist ered 2n34 39 u4 through 2n34 40 u4 series. ? rohs compliant b y design . ? vce(sat) = 0.5 v @ ic = 50 ma . ? turn - on time t on = 1.0 s m ax @ i c = 20 ma, i b1 = 2.0 ma . ? turn - off time t off = 10 s m ax @ i c = 20 ma, i b1 = -i b2 = 2.0 ma . a pplications / benefits ? general purpose transistors for medium power applications requiring high frequency switching and low package profile. ? military and other high - reliability applications. m axim um ratings @ t c = +25c unless otherwise noted . msc C la w rence 6 lake street, lawrence, ma 01841 tel: 1- 800 - 446 - 1158 or (978) 620 - 2600 fax: (978) 689 - 0803 msc C ireland gort road business park, e nnis, co. clare, ireland tel: +353 (0) 65 6840044 fax: +353 (0) 65 6822298 website: www.microsemi.com parameters / test conditions symbol 2n3439 u4 2n3 4 40 u4 unit collector - emitter voltage v ceo 350 250 v collector - base voltage v cbo 450 300 v emitter - base voltage v ebo 7.0 v collector current i c 1.0 a total power dissipation @ t a = +25 c (1) @ t c = + 25 c (2) p d 0.8 5.0 w operating & storage junction temperature range t j , t stg - 65 to +200 c notes : 1. derate linearly @ 4.57 mw/c for t a > +25 c. 2. derate linearly @ 28.5 mw/c for t c > +25 c. downloaded from: http:///
lds -00 22 - 2, rev . 1 (111617) ?2011 microsemi corporation page 2 of 6 2n3439u4 thru 2n3440u4 mechanical and packaging ? case: hermetically sealed, aluminum nitride (aln) ceramic body with gold over nickel plated kovar lid. ? terminals: gold over nickel plated surface mount terminations . ? marking: part number, d ate c ode, m anufacturers id . ? polarity: see package dimensions . ? tape & reel option: standard per eia - 481d. consult factory for quantities. ? w eight: 0 .125 grams (125 milligrams) . ? see p ackage d imensions on last page. part nomenclature jan 2n3439 u4 reliability level jan = jan level jantx = jantx level jantxv = jantxv level jans * = jans level (*2n3440u4 only) blank = c ommercial jedec type number (s e e electrical characteristics table ) surface mount package type symbols & definitions symbol definition c ibo c ommon - base open - circuit input capacitance . c obo c ommon - base open - circuit output capacitance . i ceo c ollector cutoff current, base open . i cex c ollector cutoff current, circui t between base and emitter . i ebo e mitter cutoff current, collector open . h fe c ommon - emitter static forward current transfer ratio . v be b ase - emitter voltage, dc . v ce c ollector - emitter voltage, dc . v ceo c ollector - emitter voltage, base open . v cbo c ollec tor - emitter voltage, emitter open . v eb e mitter - base voltage, dc . v ebo e mitter - base voltage, collector open . downloaded from: http:///
lds -00 22 - 2, rev . 1 (111617) ?2011 microsemi corporation page 3 of 6 2n3439u4 thru 2n3440u4 electrical characteristics @ t a = +25c, unless otherwise noted . off character is tics parameters / test conditions symbol min. max. unit collector - emitter breakdown voltage i c = 10 ma v (br)ceo 350 250 v r bb1 = 470 ? ; v bb1 = 6 v l = 25 mh (min); f = 30 C 60 hz 2n3439 u4 2n3440 u4 collector - emitter cutoff current i ceo 2.0 2.0 a v ce = 300 v v ce = 200 v 2n3439u4 2n3440 u4 emit ter - base cutoff current v eb = 7.0 v i ebo 10 a collector - emitter cutoff current i cex 5.0 5.0 a v ce = 450 v, v be = - 1.5 v v ce = 300 v, v be = - 1.5 v 2n3439u4 2n3440 u4 collector - base cutoff current i cbo 2.0 2.0 5.0 5.0 a v cb = 360 v v cb = 250 v v cb = 450 v v cb = 300 v 2n3439u4 2n3440 u4 2n3439u4 2n3440u4 on characteristics (1) parameters / test conditions symbol min. max. unit forward - current transfer ratio i c = 20 ma, v ce = 10 v i c = 2.0 ma, v ce = 10 v i c = 0.2 ma, v ce = 10 v h fe 40 30 10 160 collector - emitter saturation voltage i c = 50 ma, i b = 4.0 ma v ce(sat) 0.5 v base - emitter saturation voltage i c = 50 ma, i b = 4.0 ma v be(sat) 1.3 v dynamic characteristics parameters / test conditions symbol min. max. unit magnitude of common emitter small - signal short - circuit forward current transfer ratio i c = 10 ma, v ce = 10 v, f = 5.0 mhz |h fe | 3.0 15 forward current transfer ratio i c = 5.0 ma, v ce = 10v, f = 1.0 khz h fe 25 output capacitance v cb = 10 v, i e = 0, 100 khz f 1.0 mhz c obo 10 pf input capacitance v cb = 5.0 v, i e = 0, 100 khz f 1.0 mhz c ibo 75 pf (1 ) pulse test: pulse width = 300 s, d uty c ycle 2.0% . downloaded from: http:///
lds -00 22 - 2, rev . 1 (111617) ?2011 microsemi corporation page 4 of 6 2n3439u4 thru 2n3440u4 electrical characteristics @ t a = +25c, unless otherwise noted. ( continued ) switching c haracteristics parameters / test conditions symbol min. max. unit turn - on time v cc = 200 v; i c = 20 ma, i b1 = 2.0 ma t on 1.0 s turn - off time v cc = 200 v; i c = 20 ma, i b1 = -i b2 = 2.0 ma t off 10 s safe operating area (see graph below and reference mil - std - 750, method 3053 ) dc tests t c = +25 c, 1 cycle, t = 1.0 s test 1 v ce = 5.0 v, i c = 1.0 a both types test 2 v ce = 350 v, i c = 14 ma 2n3439 u4 test 3 v ce = 250 v, i c = 20 ma 2n3440 u4 v ce - collector to emitter voltage (v ) maximum safe operating area (continuous dc) i c C collector current ( ma ) downloaded from: http:///
lds -00 22 - 2, rev . 1 (111617) ?2011 microsemi corporation page 5 of 6 2n3439u4 thru 2n3440u4 graphs t c ( o c ) ( case ) figure 1 temperature - power derating curve notes: thermal resistance junction to case = 8.0 o c/w max fi nis h - alloy temp = 175 o c time (s) figure 2 maximum thermal impedance note: t c = +25 c, thermal resistance r jc = 8.0 c/w dc operation maximum rating (w) theta ( o c /w) downloaded from: http:///
lds -00 22 - 2, rev . 1 (111617) ?2011 microsemi corporation page 6 of 6 2n3439u4 thru 2n3440u4 package dimensions notes: 1. dimensions are in inches. 2. millimeter equivalents are given for general information only. 3. in accordance with asme y14.5m, diameters are equivalent to x symbology. dimensions ltr inches millimeters min max min max bl 0 .215 0 .225 5.46 5.72 bw 0 .145 0 .155 3.68 3.94 ch 0 .049 0 .075 1.24 1.91 lh 0.020 0.51 lw1 0 .135 0 .145 3.43 3.68 lw2 0 .047 0 .057 1.19 1.45 ll1 0.085 0 .125 2.16 3.17 ll2 0 .045 0.075 1.14 1.90 ls1 0 .070 0 .09 5 1.78 2.41 ls2 0.035 0 .048 0.89 1.21 q1 0.030 0 .070 0.76 1.78 q2 0.02 0 0 .035 0.51 0.89 terminal 1 collector 2 base 3 emitter downloaded from: http:///
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